| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure and a manufacturing technique for a semiconductor device which can be manufactured in good yield and can suppress variance in characteristic. SOLUTION: An island-shaped semiconductor layer is formed; a first insulating layer is formed on the semiconductor layer using an oxide film; a second insulating layer is formed on the first insulating layer using a nitride film; a gate electrode is formed on the semiconductor layer with the first insulating layer and second insulating layer interposed, a third insulating layer is formed using an oxide film to cover the gate electrode, and the third insulating layer is selectively etched to form a side-wall insulating layer on a flank of the gate electrode. COPYRIGHT: (C)2008,JPO&INPIT
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