| 摘要 |
PROBLEM TO BE SOLVED: To provide an SiC semiconductor device which can stabilize breakdown voltage over a wide range of temperature variation, and to provide a manufacturing method for such an SiC semiconductor device. SOLUTION: At an outer circumferential region, a reduced surface field layer 20 is comprised of first and second reduced surface field layers 20a and 20b. As a result, a depletion layer spreads over the second reduced surface field layer 20b with low impurity concentration at high-temperature time, while the depletion layer spreads over the first reduced surface field layer 20a with high impurity concentration in addition to the second reduced surface field layer 20b at low-temperature time, thereby allowing high breakdown voltage of about 1,000 V to be maintained over the -50°C to +200°C temperature range. COPYRIGHT: (C)2008,JPO&INPIT
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