| 摘要 |
<p>A semiconductor device and method of producing the same is provided to prevent the crack entering the interlayer insulating film under the bonding pad, so making the upper level wiring on the same layer as the bonding pad minute. A semiconductor device and method of producing the same is comprised of steps: forming an interlayer insulating film on the semiconductor substrate; forming a first metal layer on an interlayer insulating film; forming a first resist on the first metal layer and patterning the first resist; etching the first metal layer anisotropically by using first resist as a mask; forming the second metal layer on the interlayer insulating film in order to cover the first metal layer remaining; forming the second resist at a part of the domain in which the first metal layer does not exist and the domain in which the first metal layer exists on the interlayer insulating film on the second metal layer; forming bonding pad having the first metal layer and the second metal layer by using the second resist as a mask, and forming the upper level wiring having the second metal layer not having the first metal layer.</p> |
