| 摘要 |
Provided is a method for manufacturing a semiconductor device. The method, in one embodiment, includes calibrating an inspection tool configured to obtain a measurement of a semiconductor feature, including: 1) providing a test structure comprising a substrate having a trench therein, and a post feature located over the substrate adjacent the trench. The post feature, in this embodiment, includes a second layer positioned over a first layer, wherein the first layer has a notch or bulge in a sidewall thereof; 2) finding a location of the notch or bulge relative to a different known point of the test structure using a probe of the inspection tool; and 3) calculating a dimension of the probe using the relative locations of the notch or bulge and the different known point.
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