| 摘要 |
A ferroelectric film containing a perovskite type oxide that is represented by Formula (P) is formed on a substrate by a sputtering technique under conditions satisfying Formulas (1) and (2), or Formulas (3) and (4): <?in-line-formulae description="In-line Formulae" end="lead"?>(Pb1-x+deltaMx)(ZryTi1-y)Oz (P)<?in-line-formulae description="In-line Formulae" end="tail"?> wherein M is at least one kind of element selected from Bi and lanthanide elements, 0.05<=x<=0.4, and 0<y<=0.7, the standard composition being such that delta=0, and z=3, <?in-line-formulae description="In-line Formulae" end="lead"?>400<=Ts(° C.)<=475 (1)<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>20<=Vs(V)<=50 (2),<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>475<=Ts(° C.)<=600 (3)<?in-line-formulae description="In-line Formulae" end="tail"?> <?in-line-formulae description="In-line Formulae" end="lead"?>Vs(V)<=40 (4),<?in-line-formulae description="In-line Formulae" end="tail"?> wherein Ts (° C.) is the film formation temperature, and Vs (V) is the plasma potential in the plasma at the time of the film formation.
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