| 摘要 |
PROBLEM TO BE SOLVED: To provide a TFT substrate manufacturing method which can form a plurality of openings having depths different from each other without deteriorating yield.SOLUTION: A thin film transistor substrate manufacturing method comprises: a process of forming a first insulation film 31 so as to cover one of a semiconductor layer 40 and a conductive member; a process of forming on the first insulation film 31, a second insulation film 32 so as to cover the other of the semiconductor layer 40 and the conductive member; and an opening formation process of forming a first opening part CH1 and a second opening part CH2 in a lamination film 30 including the first insulation film 31 and the second insulation film 32. The opening formation process includes: a first-stage etching process of etching the lamination film 30 of at least one member to halfway down on an upper part to form a first opening 30a; and a second-stage etching process of etching the one member corresponding to the first opening 30a and the lamination film 30 on an upper part to form the first opening part CH1 and the second opening part CH2.SELECTED DRAWING: Figure 3 |
