SOI BASED FINFET WITH STRAINED SOURCE-DRAIN REGIONS

摘要

A method of fabricating a semiconductor device where: (i) the fins are formed over a porous semiconductor material layer (for example, a silicon layer); and (ii) the porous semiconductor layer is then oxidized to form an insulator layer (for example, a SiO2 buried oxide layer). The pores in the porous semiconductor layer facilitate reliable oxidation of the insulator layer by allowing penetration of gaseous oxygen (O2) throughout the layer as it is oxidized to form the insulator layer. In some of these embodiments, a thin non-porous semiconductor layer is located over the porous semiconductor layer (prior to its oxidation) to allow strained epitaxial growth of material to be used in making source regions and drain regions of the finished semiconductor device (for example, a FINFET).

主权项

1. A method of forming structures to be used in a semiconductor device, the method, comprising:
providing a pre-fin laminate structure including a set of base layer(s), a porous semiconductor layer and a fin-making layer, with the porous semiconductor layer being located on a top surface of the base layer(s), and with the fin-making layer being located on a top surface of the porous semiconductor layer; refining the pre-fin laminate structure into a fin-bearing laminate structure by selectively removing material from the fin-making layer to form a set of fin structures from the material of the fin-making layer; refining the fin-bearing laminate structure into a gate-bearing laminate structure by forming a set of gate structures with each gate structure of the set of gate structures extending over and across at least some of the fin structures; refining the gate-bearing laminate structure into a component-bearing laminate structure by forming a component-making layer of semiconductor material in at least some areas bounded by a pair of fin structures and a pair of gate structures; and refining the component-bearing laminate structure into a buried-insulator laminate structure by introducing reactive gas into pores of the porous semiconductor layer under conditions where the reactive gas reacts with the porous semiconductor layer to chemically change semiconductor material of the porous semiconductor layer into electrically insulative material.