ACTIVE DEVICE AND HIGH VOLTAGE-SEMICONDUCTOR DEVICE WITH THE SAME

摘要

A high voltage (HV) semiconductor device is provided, comprising a substrate, a first well having a first conductive type and extending down from a surface of the substrate; a plurality of active devices respectively formed on the substrate, and the adjacent active devices electrically separated from each other by an insulation. One of the active devices comprises a diffusion region doped with impurity of the first conductive type and extending down from a surface of the first well, a ring gate formed in the diffusion region, and a light doping region having a second conductive type and extending down from a surface of the diffusion region. The light doping region is offset from an edge of the insulation.

主权项

1. A high voltage (HV) semiconductor device, comprising:
a substrate; a first well having a first conductive type disposed in the substrate; a plurality of active devices respectively formed on the substrate, and the adjacent active devices electrically separated from each other by an insulation, and one of the active devices comprising: a diffusion region doped with impurity of the first conductive type disposed in the first well; a ring gate formed in the diffusion region; and a light doping region having a second conductive type disposed in the diffusion region, wherein an edge of the light doping region is offset from an edge of the insulation and separated from the insulation by the diffusion region.