| 发明名称 |
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor structure includes a semiconductor substrate, a first active area, a second active area, a first trench, at least one raised portion, and a first dielectric. The first active area is in the semiconductor substrate. The second active area is in the semiconductor substrate. The first trench is in the semiconductor substrate and separates the first active area and the second active area from each other. The raised portion is raised from the semiconductor substrate and is disposed in the first trench. The first dielectric is in the first trench and covers the raised portion. |
| 申请公布号 |
US2016190240(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514718841 |
申请日期 |
2015.05.21 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
FANG Cong-Min;KUO Kang-Min;WU Shi-Min |
| 分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure comprising:
a semiconductor substrate; a first active area in the semiconductor substrate; a second active area in the semiconductor substrate; a first trench in the semiconductor substrate and separating the first active area and the second active area from each other; at least one raised portion raised from the semiconductor substrate and disposed in the first trench; and a first dielectric in the first trench and covering the raised portion. |
| 地址 |
HSINCHU TW |
