| 发明名称 |
FINFET AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
There is provided a method of manufacturing a Fin Field Effect Transistor (FinFET). The method may include: forming a fin on a semiconductor substrate; forming a dummy device including a dummy gate on the fin; forming an interlayer dielectric layer to cover regions except for the dummy gate; removing the dummy gate to form an opening; implanting ions to form a Punch-Though-Stop Layer (PTSL) in a portion of the fin directly under the opening, while forming reflection doped layers in portions of the fin on inner sides of source/drain regions; and forming a replacement gate in the opening. |
| 申请公布号 |
US2016190236(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514814022 |
申请日期 |
2015.07.30 |
| 申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
XU Miao;ZHU Huilong;ZHAO Lichuan |
| 分类号 |
H01L29/06;H01L29/66;H01L21/265;H01L27/092;H01L21/8238 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a Fin Field Effect Transistor (FinFET), comprising:
forming a fin on a semiconductor substrate and an isolation layer surrounding the bottom of the fin; forming a dummy device including a dummy gate on the fin; forming an interlayer dielectric layer to cover regions except for the dummy gate; removing the dummy gate to form an opening; implanting ions to form a Punch-Though-Stop Layer (PTSL) in a portion of the fin directly under the opening, while forming reflection doped layers in portions of the fin on inner sides of source/drain regions; and forming a replacement gate in the opening. |
| 地址 |
Beijing CN |
