METHOD FOR MANUFACTURING P-TYPE ZnO-BASED SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING ZnO-BASED SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-concentration p-type ZnO-based semiconductor structure.SOLUTION: A method for manufacturing a p-type ZnO-based semiconductor structure comprises: a step (a) of preparing an n-type ZnO-based semiconductor structure containing Ag; and a step (B) of forming a p-type ZnO-based semiconductor structure doped with Ag by annealing the n-type ZnO-based semiconductor structure while intermittently irradiating Ag. The step (a) forms the n-type ZnO-based semiconductor structure containing Ag in an MBE (molecular beam epitaxy) device by MBE. The step (b) anneals the n-type ZnO-based semiconductor structure in the MBE device.SELECTED DRAWING: Figure 2-2