发明名称 GAS DRAINING METHOD FOR RAW MATERIAL TANK AND FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a gas draining method for a raw material tank that can suppress particles from flowing into gas piping on a secondary side of the raw material tank and a processing chamber and so on, even when gas in the raw material tank is drained.SOLUTION: A gas draining method for a raw material tank drains gas from the raw material tank containing a metal compound raw material, in a film deposition apparatus which forms a film containing metal on an object surface of an object body using the metal compound raw material. The method comprises the steps of repeating a process (step 4) of discharging sealed gas present in the raw material tank into gas piping by a volume of the gas piping by utilizing the volume of the gas piping connecting the raw material tank and a processing chamber of the film deposition apparatus, thus reducing the pressure in the raw material tank stepwisely by an amount matching the volume of the gas piping.SELECTED DRAWING: Figure 3
申请公布号 JP2016143854(A) 申请公布日期 2016.08.08
申请号 JP20150021123 申请日期 2015.02.05
申请人 TOKYO ELECTRON LTD 发明人 HARADA TAKESHIGE;TAKADA SHO;WATABE RIKIYA
分类号 H01L21/316;C23C16/44;H01L21/31 主分类号 H01L21/316
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