Thin film transistor, array substrate and display device

摘要

The present invention provides a thin film transistor, an array substrate and a display device, relating to the field of display technology, for solving the problem that a source/drain electrode metals and a gate metal may be short-circuited in the manufacturing process of an existing bottom-gate thin film transistor. The thin film transistor of the present invention comprises: a gate formed on a substrate, the gate being connected with a gate line; and a semiconductor layer formed on the gate and the gate line, at least a part of the semiconductor layer extends in the direction parallel to the substrate to exceed the edge of the gate. The array substrate of the present invention comprises the thin film transistor, and the display device comprises the array substrate. The present invention may improve the yield of the bottom-gate thin film transistor.

主权项

1. A thin film transistor, comprising:
a gate formed on a substrate, the gate being connected with a gate line; and a semiconductor layer formed on the gate and the gate line, wherein at least a part of the semiconductor layer extends in a direction parallel to the substrate to exceed an end edge of the gate, one side of the semiconductor layer away from the gate line exceeds the end edge of the gate in a direction perpendicular to the gate line, a middle part of one side of the semiconductor layer away from the gate line is recessed towards a direction close to the gate line, the middle part is defined on the basis of two ends of the semiconductor layer in the direction parallel to the gate line, and two side edges of the recessed part of the semiconductor layer are overlapping with the gate edges vertical to the gate line.