FinFET devices and methods of forming

摘要

In accordance with some embodiments, a device includes first and second p-type transistors. The first transistor includes a first channel region including a first material of a first fin. The first transistor includes first and second epitaxial source/drain regions each in a respective first recess in the first material and on opposite sides of the first channel region. The first transistor includes a first gate stack on the first channel region. The second transistor includes a second channel region including a second material of a second fin. The second material is a different material from the first material. The second transistor includes third and fourth epitaxial source/drain regions each in a respective second recess in the second material and on opposite sides of the second channel region. The second transistor includes a second gate stack on the second channel region.

主权项

1. A method comprising:
forming a first fin on a substrate, the first fin comprising a first crystalline material on the substrate; forming a second fin on the substrate, the second fin comprising a second crystalline material on the substrate, a material of the first crystalline material being different from a material of the second crystalline material; forming a first structure on the first crystalline material of the first fin and a second structure on the second crystalline material of the second fin; forming a first spacer along a sidewall of the first structure and a second spacer along a sidewall of the second structure; simultaneously etching the first crystalline material to form a first recess in the first fin and adjacent the first spacer, and etching the second crystalline material to form a second recess in the second fin and adjacent the second spacer, the first recess extending laterally under the first spacer further than the second recess laterally extends under the second spacer; and epitaxially growing a first epitaxial source/drain region in the first recess and a second source/drain region in the second recess.