Verfahren zur Erhoehung der Stromverstaerkung und der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxid-Deckschicht

摘要

1,259,923. Semi-conductor devices. SIEMENS A.G. 29 Jan., 1970 [31 Jan., 1969], No. 4422/70. Heading H1K. A semi-conductor device comprising a body of semi-conductor material, a PN junction and a dielectric layer is subjected to a dose of radiation incident on the dielectric layer and penetrating into the body, and subsequently electrically loaded so as to raise the junction temperature to between 50‹ and 250‹ C., the irradiation and loading being repeated. The radiation may be electron, X, or gamma radiation. An embodiment may be a silicon transistor with a silicon dioxide dielectric layer. During irradiation, which dose may be from 104 to 109 rads, the electrodes of the transistor may be shortcircuited. The electrical loading must be carried out in the absence of radiation, the emitter base junction being forward biased, the collector base reverse biased, although alternatively loading may also take place during radiation in addition to the normal loading. The irradiation causes the current gain, i.e. collector/base current, to decrease, a state which subsequent loading remedies. A series of radiation and loading operations may be made, the final current amplification being greater than the original. The device is said to be protected against future in-service radiation.