| 摘要 |
1,254,899. Transistor logic circuits. NORTH AMERICAN ROCKWELL CORP. 23 Oct., 1969 [4 March, 1969], No. 52050/69. Heading H3T. [Also in Division H1] In a four-phase logic circuit comprising fieldeffect transistors, a field-effect transistor 13 gates the input to a selectively switched semiconductor capacitor 32. This capacitor comprises a first electrode 15 contacting an n-type region formed in a p-type substrate and a second electrode 7 which is insulated from this substrate by an insulating layer and arranged so that when a voltage is applied to it an inversion layer is created in the substrate under the insulating layer and continuous with the N-type region forming a capacitor comprising electrode 7, the insulating layer and the inversion layer, but when ground is applied to it the inversion layer is eliminated and the capacitor is discharged. Thus it can be arranged that the gating capacitor 32 is not, or is, present according to whether the signal applied to it grounds terminal 7 or not respectively. |
