| 摘要 |
1,198,733. Diffusion process. SIEMENS A.G. 24 April, 1968 [26 April, 1967], No. 19313/68. Heading H1K. A source used in diffusing phosphorus from the vapour phase into semi-conductors such as silicon and germanium consists of a mixture of phosphorus pentoxide and water; the source temperature and the pressure in the system are chosen such that the mixture is azeotropic. The source may be made by adding phosphorus pentoxide to orthophosphoric acid or to metaphosphoric acid. |
