发明名称 PHOTOMASK AND ITS PRODUCTION
摘要 <p>PURPOSE:To easily produce a photomask having a resolution improving effect to an isolated pattern and excellent in acid and light resistance. CONSTITUTION:A Cr-SiO2 combined target is sputtered with a gas mixed with oxygen to form a thin-film 2 of a chromium oxide-silicon oxide mixture on a glass substrate 1. The compsn. of the thin film 2 is varied by varying the area ratio between Cr and SiO2 in the combined target and the transmissivity of the thin film 2 can be regulated by varying the compsn. of the thin film 2.</p>
申请公布号 JPH06250375(A) 申请公布日期 1994.09.09
申请号 JP19930033037 申请日期 1993.02.23
申请人 NEC CORP 发明人 TANABE YASUYOSHI;IWABUCHI YOKO;SHIODA ATSUSHI
分类号 G03F1/08;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/08
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