发明名称 |
PHOTOMASK AND ITS PRODUCTION |
摘要 |
<p>PURPOSE:To easily produce a photomask having a resolution improving effect to an isolated pattern and excellent in acid and light resistance. CONSTITUTION:A Cr-SiO2 combined target is sputtered with a gas mixed with oxygen to form a thin-film 2 of a chromium oxide-silicon oxide mixture on a glass substrate 1. The compsn. of the thin film 2 is varied by varying the area ratio between Cr and SiO2 in the combined target and the transmissivity of the thin film 2 can be regulated by varying the compsn. of the thin film 2.</p> |
申请公布号 |
JPH06250375(A) |
申请公布日期 |
1994.09.09 |
申请号 |
JP19930033037 |
申请日期 |
1993.02.23 |
申请人 |
NEC CORP |
发明人 |
TANABE YASUYOSHI;IWABUCHI YOKO;SHIODA ATSUSHI |
分类号 |
G03F1/08;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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