| 摘要 |
<p>1325811 Semi-conductor devices RCA CORPORATION 17 May 1971 [25 May 1970] 15246/71 Heading H1K To establish a given surface potential and to prevent surface inversion layers in a silicon semiconductor device due to the presence of a silicon dioxide insulating layer on the surface of the device, a second insulating layer of silicon nitride is applied over the silicon dioxide layer. The silicon dioxide layer must be thin enough to allow electrons to tunnel through it to the interface between the two insulating layers and thus has a thickness of less than 50 Š. The surface potential is determined primarily by the temperature at which the silicon nitride layer is deposited. The invention is described as applied to a silicon body containing two IGFETS wherein a silicon nitride layer 70 covers a silicon dioxide layer 68 to prevent a surface channel forming in the region 74 and linking the two transistors. Electrodes are of gold, aluminium or silicon and the thickness of layer 70 is such as to prevent voltage, present in leads overlying the layer affecting unduly the surface charge on the silicon body.</p> |
