发明名称 |
Semiconductor switching device having plural MOSFET's, GTO's or the like connected in series |
摘要 |
A semiconductor switching device includes a row of a plurality of switching elements connected in series. The input terminal of the input-nearest switching element and the output terminal of the output-nearest switching element are connected with the input terminal and output terminal of the semiconductor switching device, respectively. A control signal is applied to the control terminal of the output-nearest switching element. The semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row; and a second capacitive element connected between the output terminal and input terminal of the input-nearest switching element. At least the switching elements (S2-Sn) have insulating gates, respectively.
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申请公布号 |
US4692643(A) |
申请公布日期 |
1987.09.08 |
申请号 |
US19840665132 |
申请日期 |
1984.10.26 |
申请人 |
HITACHI, LTD. |
发明人 |
TOKUNAGA, NORIKAZU;FUKUI, HIROSHI;WATANABE, KOUZOU;AMANO, HISAO;SATO, MASAYOSHI |
分类号 |
H03K17/10;(IPC1-7):H03K17/687;H03K17/60 |
主分类号 |
H03K17/10 |
代理机构 |
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代理人 |
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地址 |
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