发明名称 Single crystal thin films
摘要 A system and techniques are disclosed for forming single crystal films with the use of energy sources that can create shaped hot zones. The energy may be from any source provided that it can be shaped, directed and can heat the film to become molten and recrystallized by liquid phase epitaxy. The hot zone created by the heat source is shaped such that the angle defined by the scanned hot zone's trailing liquid edge is smaller than the angle defined by the intersection of the crystal's slowest growth planes.
申请公布号 US4707217(A) 申请公布日期 1987.11.17
申请号 US19860868399 申请日期 1986.05.28
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 发明人 AKLUFI, MONTI E.
分类号 C30B13/16;C30B13/24;C30B13/28;(IPC1-7):C30B13/12 主分类号 C30B13/16
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