Semiconductor memory device

摘要

A semiconductor integrated circuit memory device in which FET memory transistor cells are disposed in a matrix wherein the source diffusion channels form a data path for each column of cells while the drain diffusion channels and gate electrodes are used for row and column addressing, respecitvely, and has extremely reliable ohmic contacts by virtue of a different pattern of the field insulating film used in the manufacturing process, as a result of which the depth of a source contact hole and a drain contact hole are substantially equal.