| 摘要 |
PURPOSE: To reduce leaking current by growing a tungsten film twice and improving a step-coating ability in a contact port. CONSTITUTION: A junction layer 2 is formed on a semiconductor substrate 1, an insulating film 3 is formed on the junction layer 2 to be thick, and the insulating film 3 is etched through a photograph-etching process for forming the junction layer 2 and a metal wiring. Thus, a contact port is formed on the junction port 2. For growing a tungsten film only on the contact port, the tungsten film 41 is selectively and chemically vapor phase-evaporated to the thickness of about 1000Åin a low-temperature state of not more than 250 deg.C. Then, a tungsten film 42 is selectively and chemically vapor phase-evaporated on the tungsten film 41 in the high-temperature state of not less than 350 deg.C. Thus, a leak current characteristic can be maintained stably, and the evaporation speed of the tungsten film can be improved.
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