Thin film semiconductor device including a driver and a matrix circuit

摘要

A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3x1015 atoms/cm2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low concentration (1x1013 atoms/cm2) whereby the low concentration region serves to reduce the off current.