发明名称 Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation
摘要 A gas feeding device for feeding to a reaction vessel a starting gas for film formation by chemical vapor deposition. The gas feeding device is connected to a container which contains an organometallic compound, and has a plurality of gas introducing openings for introducing a carrier gas into the container for carrying vaporized organometallic compound into the reaction vessel. The gas feeding device includes an accelerating device which selects a carrier gas introducing route into the container through at least one of the plurality of gas introducing openings for accelerating the generation of the starting gas.
申请公布号 US5476547(A) 申请公布日期 1995.12.19
申请号 US19940232431 申请日期 1994.04.21
申请人 CANON KABUSHIKI KAISHA 发明人 MIKOSHIBA, NOBUO;TSUBOUCHI, KAZUO;MASU, KAZUYA
分类号 C23C16/20;C23C16/448;C30B25/14;(IPC1-7):C23C16/52 主分类号 C23C16/20
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