发明名称 |
Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation |
摘要 |
A gas feeding device for feeding to a reaction vessel a starting gas for film formation by chemical vapor deposition. The gas feeding device is connected to a container which contains an organometallic compound, and has a plurality of gas introducing openings for introducing a carrier gas into the container for carrying vaporized organometallic compound into the reaction vessel. The gas feeding device includes an accelerating device which selects a carrier gas introducing route into the container through at least one of the plurality of gas introducing openings for accelerating the generation of the starting gas.
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申请公布号 |
US5476547(A) |
申请公布日期 |
1995.12.19 |
申请号 |
US19940232431 |
申请日期 |
1994.04.21 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MIKOSHIBA, NOBUO;TSUBOUCHI, KAZUO;MASU, KAZUYA |
分类号 |
C23C16/20;C23C16/448;C30B25/14;(IPC1-7):C23C16/52 |
主分类号 |
C23C16/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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