MANUFACTURING METHOD OF PHOTOWAVEGUIDE, SEMICONDUCTOR, LASER-WAVEGUIDE INTEGRATED DEVICE, SEMICONDUCTOR LASER-WAVEGUIDE-PHOTODIODE INTEGRATED DEVICE, SEMICONDUCTOR LASER-WAVEGUIDE-MODE MATCHING INTEGRATED DEVICE, MODE MATCHING ELEMENT

摘要

PURPOSE: To provide a manufacturing method of semiconductor laser, waveguide integrated device in the integrated structure of photowaveguide easily manufactured having smooth surface of semiconductor layer capable of improving the surface processing precision integrally laminated with a semiconductor laser. CONSTITUTION: An epitaxially grown semiconductor layer including a MQW active layer 3 on an n-GaAs substrate 1 is ion-implanted to disorder the MQW structure for making not disordered MQW layer 3, a photowaveguide to manufacture a semiconductor layer.waveguide integrated layer intengrally formed. Accordingly, in comparison with any conventional buried type, rigid type photowaveguides only one time crystalline growing step suffices for eliminating the etching step and bury-in growing steps, thereby enabling the manufacture of the devices to make a rapid progress. Furthermore, the processing precision can be notably increased due to the planar structure.