Zweistufiges Selbstreinigungsverfahren einer Reaktionskammer

摘要

A reactor chamber self-cleaning process is disclosed which uses a fluorocarbon-containing gas and, preferably, C2F6 in combination with oxygen. The two-step process involves, first, a chamber-wide etch at relatively low pressure and with relatively large separation between the gas inlet manifold and the wafer supports which are the RF electrodes and, second, a local etch step which uses a relatively high chamber pressure and smaller electrode spacing, to complete the cleaning of the RF electrodes.