发明名称 |
Si-SiGe semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device comprises a semiconductor substrate, a first semiconductor layer under compressive strain formed on the semiconductor substrate, a p-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in a predetermined region of the first semiconductor layer, a second semiconductor layer in a lattice-relaxation condition formed on the first semiconductor layer in a region other than the predetermined region with an insulating film lying therebetween, wherein the insulating film has an opening and the first and second semiconductor layers are connected through the opening, a third semiconductor layer under tensile strain formed on the second semiconductor layer, and an n-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in the third semiconductor layer.
|
申请公布号 |
US5847419(A) |
申请公布日期 |
1998.12.08 |
申请号 |
US19970931411 |
申请日期 |
1997.09.16 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IMAI, SEIJI;HIRAOKA, YOSHIKO;KUROBE, ATSUSHI;SUGIYAMA, NAOHARU;TEZUKA, TSUTOMU |
分类号 |
H01L27/06;H01L27/092;H01L29/786;(IPC1-7):H01L29/161 |
主分类号 |
H01L27/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|