发明名称 Magnetic tunnel junction element, tunneling magnetoresistive head, and production methods
摘要 <p>The present invention suppresses generation of the Barkhausen noise by providing a magnetic tunnel junction element including: a first magnetic layer having magnetization fixed in a predetermined direction, an insulation layer formed on the first magnetic layer, and a second magnetic layer formed on the insulation layer and changing its magnetization direction according to an external magnetic field, wherein the second magnetic layer is provided with non-conducting magnetic domain control films formed at both end portions on the second magnetic layer. &lt;IMAGE&gt;</p>
申请公布号 EP1098203(A2) 申请公布日期 2001.05.09
申请号 EP20000123750 申请日期 2000.10.31
申请人 SONY CORPORATION 发明人 SUGAWARA, JUNICHI;NAKASHIO, EIJI;KUMAGAI, SEIJI
分类号 G01R33/09;G11B5/39;H01F10/30;H01F10/32;H01F41/34;H01L43/08;H01L43/10;H01L43/12;(IPC1-7):G01R33/09 主分类号 G01R33/09
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