| 摘要 |
PURPOSE: To provide a semiconductor device having uniform elements. CONSTITUTION: The semiconductor device comprises a plurality of element formation regions, having different element region widths W, and element isolation regions formed between the element formation regions. A method of forming the element isolation regions comprises a process of forming trenches in a semiconductor substrate preliminarily deposited with a first insulation film; a process of depositing a second insulation film having a film thickness t on the semiconductor substrate to fill in the trenches; a process of removing a part of the second insulation film on the element formation regions, which have such an element region width W that satisfies the equation W >= 2t/tan&thgr;, where &thgr; is the deposition angle of the second insulation film on the element formation regions; and a process of polishing the second insulation film by a CMP method.
|
