SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A semiconductor memory device is provided to embody miniaturization and improve reliability by removing a short-circuiting between embedded layers and forming a good quality of the second interlayer dielectric. CONSTITUTION: A semiconductor memory device is prepared wherein at least one of a storage node contact hole and a bitline contact hole includes the first contact hole made in the first interlayer dielectric formed over a gate electrode and the second contact hole made in the second interlayer dielectric formed over an electrically conductive material embedded up to a level higher than the gate electrode in the first contact hole. The first contact hole contacts the electrically conductive material. The conductive material is exposed by etching a part of the second interlayer dielectric, whereby the size of the memory device can be made small. A capacitor is formed in a layer higher than a bitline thereby to facilitate the processing of a storage node electrode so that the capacitor area is increased and the reliability is improved since a plate electrode doesn't need to be patterned within a cell array.