| 摘要 |
A method for manufacturing a thin film transistor panel includes the steps of forming a first metal pattern on an insulating substrate; depositing an insulating layer and a semiconductor layer including an impurity-doped layer over the insulating substrate having the first metal pattern sequentially; forming a photoresist pattern on the semiconductor layer, wherein the photoresist pattern includes a first portion facing the channel region of TFTs, a second portion that is thicker than the first portion, and a third portion having no photoresist; etching the semiconductor layer with the photoresist pattern as an etch mask; reducing the thickness of the photoresist pattern layer till the first portion of the photoresist pattern is removed; removing the impurity-doped layer exposed at the channel region; and forming a second metal pattern on the patterned semiconductor layer and the gate insulating layer.
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