SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has a capacitor insulating film of a ferroelectric film having an excellent polarization characteristic even when its volume is very small. SOLUTION: The semiconductor device has a first electrode 18 as an underlying base, a capacitor insulating film 19 of a ferroelectric film formed on the first electrode 18, and a second electrode 20 formed on the capacitor insulating film 19. The ferroelectric film in the vicinity of an interface between the first electrode 18 and the capacitor insulating film 19 has a mean particle diameter of crystalline grains not smaller than 5 nm and not larger than 50 nm. COPYRIGHT: (C)2005,JPO&NCIPI