| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-performance magnetic shielding effect suitable for a magnetic device such as MRAM by lightening magnetic saturation. SOLUTION: A magnetic sealing structure is suitable for a magnetic memory device. In the magnetic memory device, a magnetization pinned layer having a fixed magnetization direction and a magnetic layer (storage layer) having a variable magnetization direction are laminated with a tunnel barrier layer disposed therebetween to form a TMR (Tunnel MagnetoResistance) element, and a magnetic random access memory (MRAM) 30 made of the TMR element is sealed with a sealing material 32 such as resin. In the magnetic sealing structure, planar or cross-sectional shapes of magnetic shielding plates 62A, 62B provided on the sealing material 32 for magnetically sealing the MRAM 30 are made not to be perpendicular to a side nearly parallel to a side nearly normal to the direction of an external magnetic field, in particular, to be circular, polygonal or the like. Consequently, the magnetic saturation of the magnetic shielding plate can be relaxed and a magnetic shielding effect can be held. COPYRIGHT: (C)2005,JPO&NCIPI |
