发明名称 |
LOW DOPED LAYER FOR NITRIDE-BASED SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide nitride-based semiconductor devices, such as Schottky diodes, having a layer formed to allow re-creating very low and uniform doping. SOLUTION: A re-creatable and uniform low-doped layer is formed of a plurality of sub-layers 208 of doped nitride semiconductor material and a plurality of sub-layers 209 of undoped nitride semiconductor material alternately arranged atop another layer. A Schottky diode is formed of such a low-doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer 106. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005236287(A) |
申请公布日期 |
2005.09.02 |
申请号 |
JP20050039131 |
申请日期 |
2005.02.16 |
申请人 |
EMCORE CORP |
发明人 |
POPHRISTIC MILAN;MURPHY MICHAEL;STALL RICHARD A;SHELTON BRYAN S;LIU LINLIN;CERUZZI ALEX D |
分类号 |
H01L21/28;H01L29/15;H01L29/20;H01L29/45;H01L29/47;H01L29/778;H01L29/872;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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