METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve a contact open margin and to minimize a shoulder loss of a gate line by embodying high etch selectivity on an uppermost layer of a gate hard mask nitride layer and a landing plug contact hard mask made of a nitride layer under the same conditions. A plurality of gate lines including at least a hard mask are formed on a semiconductor substrate(31). The hard mask is composed of a double layer structure with different etch selectivity. An insulating layer is filled in a predetermined portion between adjacent gate lines. A contact mask(38) and an ARC(Anti-Reflective Coating)(39) are formed on the entire surface of the resultant structure. The contact mask and the ARC are etched until the hard mask is exposed to the outside. A hole is formed on the resultant structure by etching selectively the insulating layer.