发明名称 |
Floating gate, a nonvolatile memory device including the floating gate and method of fabricating the same |
摘要 |
Example embodiments may provide a nonvolatile memory device. The example embodiment nonvolatile memory device may include a floating gate structure formed on a semiconductor substrate with a gate insulating layer between them and/or a control gate formed adjacent to the floating gate with a tunneling insulation layer between them. The floating gate may include a first floating gate formed on the gate insulating layer, a second floating gate formed on the first floating gate with a first insulating pattern between them, and/or a gate connecting layer formed on at least one sidewall of the first insulating pattern so that the gate conducting layer may electrically connect the first floating gate and the second floating gate. The second floating gate may have a tip formed at its longitudinal end that may not contact the gate connecting layer.
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申请公布号 |
US2007200165(A1) |
申请公布日期 |
2007.08.30 |
申请号 |
US20070656454 |
申请日期 |
2007.01.23 |
申请人 |
JEONG YOUNG-CHEON;KWON CHUL-SOON;YU JAE-MIN;PARK JAE-HYUN;MOON JUNG-HO;HA SOUNG-YOUB;LIM BYEONG-CHEOL |
发明人 |
JEONG YOUNG-CHEON;KWON CHUL-SOON;YU JAE-MIN;PARK JAE-HYUN;MOON JUNG-HO;HA SOUNG-YOUB;LIM BYEONG-CHEOL |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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