发明名称 |
Methods of implementing magnetic tunnel junction current sensors |
摘要 |
Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction ("MTJ") core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.
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申请公布号 |
US7271011(B2) |
申请公布日期 |
2007.09.18 |
申请号 |
US20050262054 |
申请日期 |
2005.10.28 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
CHUNG YOUNG SIR;BAIRD ROBERT W.;DURLAM MARK A. |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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