发明名称 Methods of implementing magnetic tunnel junction current sensors
摘要 Techniques are provided for sensing a first current produced by an active circuit component. According to these techniques, a current sensor is disposed over the active circuit component. The current sensor includes a Magnetic Tunnel Junction ("MTJ") core disposed between a first conductive layer and a second conductive layer. The MTJ core can be used to sense the first current and produce a second current based on the first current sensed at the MTJ core.
申请公布号 US7271011(B2) 申请公布日期 2007.09.18
申请号 US20050262054 申请日期 2005.10.28
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 CHUNG YOUNG SIR;BAIRD ROBERT W.;DURLAM MARK A.
分类号 H01L21/00 主分类号 H01L21/00
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