发明名称 |
METHOD AND APPARATUS FOR PERFORMING MODEL-BASED OPC FOR PATTERN DECOMPOSED FEATURES |
摘要 |
A method and an apparatus for performing model-based OPC(Optical Proximity Correction) for pattern decomposed features are provided to decompose a target circuit pattern containing features to be imaged into multiple patterns for regenerating desired target pattern within an acceptable error criterion with high accuracy. A method for decomposing a target circuit pattern containing features to be printed on a wafer comprises the steps of: splitting the features to be printed into a first pattern and a second pattern(62); performing a first OPC(Optical Proximity Correction) process on the first and second patterns(65); deciding imaging performance of the first and second patterns; deciding a first error between the first pattern and first imaging performance, and a second error between the second pattern and second imaging performance; using the first error in adjustment of the first pattern for generating a corrected first pattern(67); using the second error in adjustment of the second pattern for generating a corrected second pattern; applying a second OPC process on the corrected first and second patterns(69). |
申请公布号 |
KR20080024457(A) |
申请公布日期 |
2008.03.18 |
申请号 |
KR20070093322 |
申请日期 |
2007.09.13 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
HSU DUAN FU STEPHEN;PARK, JUNG CHUL;VAN DEN BROEKE DOUGLAS;CHEN JANG FUNG |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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