| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor lamination structure using group III nitride semiconductor that is suitable for application of power device or the like, together with its formation method, and to provide a nitride semiconductor element provided with a nitride semiconductor lamination structure part that is formed by the formation method, together with its manufacturing method. SOLUTION: When forming the nitride semiconductor lamination structure made of group III nitride semiconductor, an insulation film mask 8 having an opening 9 is formed on an n-type GaN layer 7. Then, an n-type GaN layer 3 made of group III nitride semiconductor, a p-type GaN layer 4 and an n-type GaN layer 5 are grown in this order from the n-type GaN layer 7 exposed from the opening 9 of the insulation film mask 8, forming a mesa lamination part 15 with npn structure. COPYRIGHT: (C)2008,JPO&INPIT
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