发明名称 DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING ELEMENT AND X-RAY HIGH-VOLTAGE APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a drive circuit capable of regenerating electric charges stored in an input capacitance of a semiconductor switching element into a direct-current power supply side, and an X-ray high-voltage apparatus using it. SOLUTION: In order to drive a semiconductor switching element having an input capacitance formed between a gate electrode and a first output electrode, a first switch is connected between a direct-current voltage source and the gate electrode, a second switch is connected between the first output electrode and a reference potential terminal of the direct-current voltage source, and the first and second switches are turned on to turn the semiconductor switching element on. A direct-current voltage of the direct-current voltage source is boosted, a third switch is connected between the boosted-voltage power supply and the first output electrode, and the third switch is turned on to turn the semiconductor switching element on during a period of off-state of the first and second switches, so as to regenerate electric charges of the input capacitance charged in a period of on-state of the first and second transistors into the direct-current voltage source during a period of on-state of the third switch. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008226723(A) 申请公布日期 2008.09.25
申请号 JP20070065463 申请日期 2007.03.14
申请人 TOSHIBA CORP;TOSHIBA MEDICAL SYSTEMS CORP 发明人 ISHIYAMA FUMIO
分类号 H05G1/20 主分类号 H05G1/20
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