发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING ENCAPSULATION FILM AND METHOD OF MANUFACTURING THE SAME
摘要 The present invention relates to a semiconductor integrated circuit device and a manufacturing method thereof. The semiconductor integrated circuit device includes a resistance layer, and an encapsulation film formed to enclose a side wall of the resistance layer. The encapsulation film includes an oxygen absorbing element. According to the present invention, the semiconductor integrated circuit device can reduce a change in a property of a phase transition layer.
申请公布号 KR20160079990(A) 申请公布日期 2016.07.07
申请号 KR20140190936 申请日期 2014.12.26
申请人 SK HYNIX INC. 发明人 OH, SANG CHUL;PARK, HAE CHAN;LEE, SE HO
分类号 H01L27/115;H01L21/56 主分类号 H01L27/115
代理机构 代理人
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