WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

摘要

Disclosed are a wafer-level light emitting diode package and a method of fabricating the same. The light emitting diode package includes a semiconductor laminate which includes a first conductivity type upper semiconductor layer, an active layer and a second conductivity type lower semiconductor layer; a plurality of contact holes which penetrate the second conductivity type lower semiconductor layer and the active layer and exposes the first conductivity type upper semiconductor layer; a first bump which is located under the semiconductor laminate and is electrically connected to the first conductivity type upper semiconductor layer exposed by the contact holes; a second bump which is located under the semiconductor laminate and is electrically connected to the second conductivity type lower semiconductor layer; and a protective insulating layer which covers the sidewall of the semiconductor laminate. So, the wafer-level light emitting diode package can be modulated in a circuit board without an existing lead frame or PCB.