| 发明名称 | Method of forming mask structure | ||
| 摘要 | A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film. | ||
| 申请公布号 | US9388495(B2) | 申请公布日期 | 2016.07.12 |
| 申请号 | US201414528047 | 申请日期 | 2014.10.30 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Watanabe Masahisa;Kubota Hiroshi;Chiba Kazuaki |
| 分类号 | C23C16/04;C23C16/08;C23C16/458;C23C16/24;H01L21/311 | 主分类号 | C23C16/04 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A method of forming an etching mask structure on an insulating film containing silicon and oxygen, comprising: forming a first silicon film on the insulating film formed on a substrate; forming a reaction blocking layer on a surface layer of the first silicon film; forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film. | ||
| 地址 | Tokyo JP | ||