Method for production of trichlorosilane and silicon for use in the production of trichlorosilane

摘要

The present invention relates to a method for the production of trichlorosilane by reaction of silicon with HCI gas at a temperature between 250° and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or a solid bed reactor, where the silicon supplied to the reactor contains between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper The invention further relates to silicon for use in the production of trichlorosilane by reaction of silicon with HCI gas, containing between 40 and 10.000 ppm by weight barium and optionally 40-10000 ppm by weight copper, the remaining except for normal impurities being silicon.

主权项

1. A method for increasing trichlorosilane (TCS) selectivity in direct chlorination comprising:
reacting silicon with HCI gas at a temperature between 250 and 1100° C., and an absolute pressure of 0.5-30 atm in a fluidized bed reactor, in a stirred bed reactor or in a solid bed reactor; and supplying barium or barium compounds and copper or copper compounds to the reactor in an amount necessary to maintain a barium content in the reactor of between 100 and 50,000 ppm based on the weight of silicon in the reactor and to maintain a copper content in the reactor of between 200 and 50,000 ppm by weight, thereby increasing selectivity of trichlorosilane in direct chlorination.