发明名称 Opto-electronic sensor
摘要 Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.
申请公布号 US9417186(B2) 申请公布日期 2016.08.16
申请号 US201213598841 申请日期 2012.08.30
申请人 Infineon Technologies AG 发明人 Jakoby Bernhard;Lachiev Ventsislav;Grille Thomas;Irsigler Peter;Hedenig Ursula;Sgouridis Sokratis;Ostermann Thomas Krotscheck
分类号 H01L33/48;G01N21/552;G01N21/64;G01N21/77 主分类号 H01L33/48
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. An infrared opto-electronic (IR) sensor, comprising: a semiconductor substrate comprising a silicon waveguide consisting of silicon and continuously extending between a radiation input conduit configured to couple radiation into the silicon waveguide and a radiation output conduit configured to couple radiation from the silicon waveguide; a buffer layer having a planar upper surface that continuously contacts a lower surface of the silicon waveguide between the radiation input conduit and the radiation output conduit, wherein the silicon waveguide is configured to convey the radiation from the radiation input conduit to the radiation output conduit at a single mode in a manner that results in an evanescent field that extends outward from the silicon waveguide to interact with a sample; and a coupling element configured to couple radiation from a radiation source into the silicon waveguide, wherein the coupling element comprises a plurality of separate layers comprising different materials vertically extending from an upper surface of the silicon waveguide to the buffer layer and stacked in a direction horizontally extending along a length of the silicon waveguide.
地址 Neubiberg DE