发明名称 HIGH FIGURE OF MERIT P-TYPE FENBHFSB THERMOELECTRIC MATERIAL AND PREPARATION METHOD THEREFOR
摘要 A high figure of merit P-type FeNbHfSb thermoelectric material. The composition of the raw materials is FeNb1-xHfxSb, wherein x = 0.06-0.2. The P-type FeNbHfSb thermoelectric material is obtained as follows: firstly, weighing the raw materials of iron, niobium, hafnium and antimony according to a chemical dosage ratio of the composition FeNb1-xHfxSb, and melting the raw materials under the protection of argon to obtain an ingot; then crushing the ingot into particles, and then sintering the particles. The high temperature stability of the P-type FeNbHfSb thermoelectric material is good, the elements constituting the material are rich in the earth's crust, the preparation process is simple, the production cycle is short, the production efficiency is high, the industrialization cost is relatively low, and the maximum ZT value thereof reaches 1.45 at 1200 K.
申请公布号 WO2016127572(A1) 申请公布日期 2016.08.18
申请号 WO2015CN84262 申请日期 2015.07.16
申请人 ZHEJIANG UNIVERSITY 发明人 ZHU, Tiejun;FU, Chenguang;ZHAO, Xinbing
分类号 H01L35/18 主分类号 H01L35/18
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