PRODUCTION OF SINGLE-CRYSTALLINE SILICON CARBIDE

摘要

PURPOSE: To grow high-quality single-crystalline silicon carbide almost free from defects. CONSTITUTION: When a silicon carbide single crystal is grown by a sublimation- recrystallization method using a seed crystal, 1ppm to 90% gaseous hydrogen is incorporated into inert gas such as Ar and the resultant gas is used as atmospheric gas.