Dynamic redundancy repair

摘要

The disclosed memory device technology for implementing dynamic device repair includes a memory array, a redundancy array and a redundancy mapping store. The memory array includes memory cells and the redundant array includes redundancy cells. The memory device also includes circuitry configured to execute a write operation and a read operation in response to respective commands, using a dynamic redundancy repair method to replace the temporary defective cells in the memory array with the redundancy cells in the redundancy array.

主权项

1. A memory device, comprising:
a memory array having a plurality of memory cells; a redundancy array having a plurality of redundancy cells; a redundancy mapping store having entries to map addresses of memory cells in the memory array to addresses of redundancy cells; and circuitry coupled to the redundancy array and the memory array, which executes a write operation in response to a write command,
the write operation writing a data value having a selected address in the memory array whether or not there is a valid entry for the selected address in the redundancy mapping store, applying a write/verify cycle to a memory cell in the memory array having the selected address, and if the selected memory cell fails verify, then writing the data value to a redundancy cell in the redundancy array and changing or writing an entry to the redundancy mapping store to map the selected address to the redundancy cell.