DRAM CELL AND THE METHOD

摘要

The DRAM cell has the feature that an oxide layer(9) formed by oxidizing a plate electrode(6) on a drain region(10') is close to a bit line(8) connected to the drain region(10'). The DRAM cell reduces the distance between the storage electrodes by forming the above oxide film(9). The method enables to form the DRAM cell with a few process.